Low resistivity single crystal silicon carbide wafer
First Claim
Patent Images
1. A low resistivity silicon carbide single crystal wafer having a specific volume resistance of 0.001 Ω
- cm to 0.012 Ω
cm, wherein 90% or greater of the entire wafer surface area over both sides of the wafer has a surface roughness (Ra) of 1.0 nm or less, wherein the basal plane stacking fault density in the wafer after high-temperature annealing at 1000°
C. to 1800°
C. is 30 cm−
1 or less.
5 Assignments
0 Petitions
Accused Products
Abstract
The invention provides a low resistivity silicon carbide single crystal wafer for fabricating semiconductor devices having excellent characteristics. The low resistivity silicon carbide single crystal wafer has a specific volume resistance of 0.001 Ωcm to 0.012 Ωcm and 90% or greater of the entire wafer surface area is covered by an SiC single crystal surface of a roughness (Ra) of 1.0 nm or less.
9 Citations
14 Claims
-
1. A low resistivity silicon carbide single crystal wafer having a specific volume resistance of 0.001 Ω
- cm to 0.012 Ω
cm, wherein 90% or greater of the entire wafer surface area over both sides of the wafer has a surface roughness (Ra) of 1.0 nm or less, wherein the basal plane stacking fault density in the wafer after high-temperature annealing at 1000°
C. to 1800°
C. is 30 cm−
1 or less. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
- cm to 0.012 Ω
Specification