Semiconductor device and method for fabricating the same
First Claim
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1. A method for fabricating semiconductor device, comprising:
- providing a substrate having a gate structure thereon;
forming an epitaxial layer adjacent to two sides of the gate structure;
forming a silicon layer on the substrate to cover the gate structure entirely;
planarizing the silicon layer;
performing a replacement metal gate (RMG) process to transform the gate structure into a metal gate; and
removing part of the silicon layer adjacent to one side of the gate structure to expose the epitaxial layer after performing the RMG process.
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Abstract
A method for fabricating semiconductor device includes the steps of: providing a substrate having a gate structure thereon; forming a silicon layer on the substrate to cover the gate structure entirely; planarizing the silicon layer; and performing a replacement metal gate (RMG) process to transform the gate structure into a metal gate.
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8 Claims
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1. A method for fabricating semiconductor device, comprising:
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providing a substrate having a gate structure thereon; forming an epitaxial layer adjacent to two sides of the gate structure; forming a silicon layer on the substrate to cover the gate structure entirely; planarizing the silicon layer; performing a replacement metal gate (RMG) process to transform the gate structure into a metal gate; and removing part of the silicon layer adjacent to one side of the gate structure to expose the epitaxial layer after performing the RMG process. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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