High speed and high voltage driver

  • US 9,979,387 B2
  • Filed: 09/11/2017
  • Issued: 05/22/2018
  • Est. Priority Date: 03/10/2016
  • Status: Active Grant
First Claim
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1. A high speed high voltage (HSHV) open drain driver comprising:

  • a main stack of transistors of a first type coupled between a reference voltage and an output node of the HSHV driver;

    a biasing circuit configured to provide biasing voltages to the main stack, the biasing circuit comprising a biasing stack of transistors of a second type;

    wherein;

    gate nodes of a first to a last transistor of the main stack are coupled sequentially and in a one to one relationship to source and/or drain nodes of a first to a last transistor of the biasing stack,source nodes of transistors of the main stack of transistors are coupled in a one to one relationship to gate nodes of transistors of the biasing stack,the output node is a drain node of an output transistor of the main stack of transistors adapted to be coupled to a high voltage by way of a pull-up element, andtransistors of the main stack and the biasing stack having desired operating voltages substantially smaller than the high voltage.

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