A light emitting device, comprising: a light emitting diode; a lens arranged to receive light from the light emitting diode, the lens comprising a total reflection surface having a total reflection slope with respect to a central axis of the light emitting diode; and at least one of a linear refractive surface and a curved refractive surface formed to extend away from the central axis and beyond a periphery of the total reflection surface. view more

The light emitting device as claimed in claim 1, wherein the refractive surface comprises: a linear refractive surface formed by being bent at the periphery of the total reflection surface; and a curved refractive surface formed to extend from a periphery of the linear refractive surface. view more

The light emitting device as claimed in claim 1, wherein the curved refractive surface takes the shape of an ellipse, and a ratio of minor and major axes of the ellipse is 1:4 or less.

The light emitting device as claimed in claim 1, wherein the total reflection surface comprises: a first total reflection surface having a section in the form of a V-shaped recess with a predetermined slope; and a second total reflection surface extending upward from a periphery of the first total reflection surface and formed to be sloped with a gradient smaller than that of the first total reflection surface. view more

The light emitting device as claimed in claim 1, wherein the refractive index of the body is 1.2 to 2.0.

The light emitting device as claimed in claim 2, wherein the curved refractive surface takes the shape of an ellipse, and a ratio of minor and major axes of the ellipse is 1:4 or less.

A method of manufacturing a light emitting device, comprising: sequentially forming an N-type semiconductor layer, active layer, and P-type semiconductor layer on a substrate; forming an etching mask pattern, of which a side surface is not perpendicular to but inclined at a slope from a horizontal plane, on the P-type semiconductor layer; and removing the etching mask pattern and the P-type semiconductor layer exposed through the etching mask pattern, wherein forming the etching mask pattern comprises: forming a photoresist on the P-type semiconductor layer; exposing the photoresist to light; hard-baking and developing the photoresist; and etching a side surface of the developed photoresist to have the slope from the horizontal plane. view more

A light emitting diode, comprising: at least one light emitting diode chip; lead terminals to apply electric power to the light emitting diode chip; a frame having the light emitting diode chip mounted thereon, the frame and the light emitting diode chip having the same shape in plan view; and a molding portion comprising a fluorescent substance for converting the wavelength of light emitted from the light emitting diode chip, the molding portion being formed on the frame, and an outer side surface of the molding portion being substantially flush with an outer side surface of the frame. view more

The light emitting diode as claimed in claim 1, wherein the molding portion and the light emitting diode chip have the same shape.

The light emitting diode as claimed in claim 1, wherein the frame is formed on one of the lead terminals.

The light emitting diode as claimed in claim 5, wherein the frame and the lead terminal are formed integrally with each other.

The light emitting diode as claimed in claim 1, wherein the frame is formed to have a rectangular shape.

The light emitting diode as claimed in claim 1, wherein the fluorescent substance is disposed above the frame without extending beyond a perimeter of the frame.

The light emitting diode as claimed in claim 1, wherein the fluorescent substance and the molding portion are both disposed above the frame without extending beyond a perimeter of the frame.

The light emitting diode as claimed in claim 1, wherein the molding portion is coterminous with the frame.

The light emitting diode as claimed in claim 1, wherein the molding portion and the frame comprise the same shape and the same size.

An irradiance-redistribution illumination lens comprising a transparent dielectric solid of revolution with external surface area predominantly comprised of an entry surface that receives light of nonuniform irradiance from a nearby compact light source and of an opposing exit surface that forms from said received light a pre-specified diverging output beam; said entry surface given a specific profile that refractively deflects said received light into a different solid angle, said entry surface spatially distributed such that said exit surface receives said deflected light with predominantly uniform irradiance, said exit surface given a specific shape that refractively deflects said uniform irradiance into said output beam; said light source being sufficiently compact for said specific shapes to be calculated by mathematical integration of the slope distributions required by said refractive deflections, said entry surface having first concavity facing toward said light source, and second concavity facing toward the entry surface, said second concavity being substantially greater than said first concavity. view more

The lens of claim 1 wherein said specific profile of said entry surface is calculated in concordance with the cumulative angular distribution of said received light; said concordance established by the correspondence of said distribution with equal values at wider radii of the shallower square-root distribution of uniform irradiance; said establishment embodied as the deflection function from each point of said entry surface to the wider radius on said exit surface having the same value of the cumulative distribution of uniform irradiance as the value at said entry-surface point of said cumulative distribution of said irradiance from said light source. view more

The lens of claim 2 wherein said specific shape of said exit face has the slope distribution that deflects said uniform irradiance into said pre-specified intensity distribution of said output beam.

The lens of claim 1 wherein said output beam has predominantly uniform intensity within a predetermined angular limit.

The lens of claim 1 wherein said output beam uniformly illuminates a target zone.

The lens of claim 5 wherein said target zone is on a plane facing said lens.

The lens of claim 1 wherein said light source is a light emitting diode.

Multiple lenses as defined in claim 8 laterally arrayed in proximity, above multiple light sources, in association with a common circuit board, and having their output beams illuminating the same target.

A light redistribution system comprising, in combination with a lens as defined in claim 1, a) LED means, b) the lens having a concave lower refracting surface receiving rays from said LED means, c) the lens having a dome-shaped refracting upper surface, the curvature of which is one of the following: i) exceeds the curvature of the lower surface, ii) is less than the curvature of the lower surface, d) a target surface receiving rays refracted by said upper surface, e) said LED means and said upper and lower surfaces configured to produce a profile of bounded flux at said target surface that provides substantially uniform illuminance. view more

An irradiance-redistribution lens comprising a transparent dielectric formed as a solid of revolution with an axis about which a planar curved profile-line is swept, with external surface area comprised of an optically active entry surface, an optically active exit surface, and an optically inactive mounting surface; said entry surface receiving light of nonuniform irradiance from a compact light source situated on said axis in a nearby focal zone; said entry surface having a specific profile that produces refractive deflection of said received light into interiorly propagating light of a different solid angle; said exit surface opposing said entry surface and receiving said internally propagating light therefrom; said exit surface forming a pre-specified diverging output beam from said internally propagating light; said entry-surface deflection spatially distributed such that said exit surface receives said deflected light with predominantly uniform irradiance, said exit surface given a specific shape that refractively deflects said uniform irradiance into said output beam; said light source being sufficiently compact for said specific shapes to be calculated by mathematical integration of the slope distributions required by said refractive deflections, said entry surface having first concavity facing toward said light source, and second concavity facing toward the entry surface, said second concavity being substantially greater than said first concavity. view more

A light redistribution system comprising, in combination with a lens as defined in claim 1, a) said light source comprising LED means, b) the lens concave lower refracting surface receiving rays from said LED means, c) the lens having a dome-shaped refracting exit surface, the curvature of which is one of the following: i) exceeds the curvature of the lower surface, ii) is less than the curvature of the lower surface, d) there being a target surface receiving rays refracted by said exit surface, e) said LED means and said entry and exit surfaces configured to produce a profile of bounded flux at said target surface that provides substantially uniform illuminance. view more

A method for improving the efficiency of epitaxially produced quantum dot semiconductor components having at least one quantum dot layer, comprising the step of interrupting growth of the semiconductor component each time after a layer of coherent quantum dots has been overgrown with a layer of semiconductor material at least thick enough to completely cover all the quantum dots, wherein the step of interrupting growth of the semiconductor component is carried out for each quantum dot layer. view more

Method according to claim 1, characterized in that the growth front is smoothed during the growth interruption.

A backlight panel, comprising: a diffusion plate comprising a top surface and a bottom surface; a plurality of white light emitting diodes arranged below the bottom surface of the diffusion plate, the white light emitting diodes to emit light directly onto the bottom surface of the diffusion plate; and a reflection sheet arranged below light exit surfaces of the white light emitting diodes, the reflection sheet to reflect light toward the diffusion plate, wherein each white light emitting diode comprises a blue light emitting diode chip and a red phosphor and a green phosphor arranged on the blue light emitting diode chip. view more

The backlight panel of claim 1, further comprising a brightness enhancement film and/or a dual brightness enhancement film arranged on the top surface of the diffusion plate.

The backlight panel of claim 1, further comprising an air gap arranged between the bottom surface of the diffusion plate and the reflection sheet.

The backlight panel of claim 4, wherein light emitted from the white light emitting diodes is mixed together in the air gap before being emitted directly onto the bottom surface of the diffusion plate.

A light emitting diode, comprising: a lower contact layer comprising a first edge, a second edge opposite to the first edge, a third edge connecting the first edge to the second edge, and a fourth edge opposite to the third edge; a mesa structure arranged on the lower contact layer, the mesa structure comprising an active layer and an upper contact layer; a first electrode pad arranged on the lower contact layer; a second electrode pad arranged on the mesa structure; a first lower extension and a second lower extension extending from the first electrode pad towards the second edge, distal ends of the first lower extension and the second lower extension being farther away from each other than front ends thereof contacting the first electrode pad; and a first upper extension, a second upper extension, and a third upper extension extending from the second electrode pad, wherein the first upper extension and the second upper extension extend from the second electrode pad to enclose the first lower extension and the second lower extension, and the third upper extension extends to a region between the first lower extension and the second lower extension, and wherein the first lower extension and the second lower extension comprise a shape convexly bent towards the third edge and the fourth edge, respectively. view more

The light emitting diode of claim 1, wherein the front ends of the first lower extension and the second lower extension are farther away from the first edge than the center of the first electrode pad.

The light emitting diode of claim 2, wherein the first upper extension and the second upper extension comprise a shape convexly bent towards the third edge and the fourth edge, respectively.

The light emitting diode of claim 1, wherein the mesa structure comprises a symmetrical structure along a straight line passing through the centers of the first electrode pad and the second electrode pad.

A light emitting diode, comprising: a lower contact layer comprising a first edge, a second edge opposite to the first edge, a third edge connecting the first edge to the second edge, and a fourth edge opposite to the third edge; a mesa structure arranged on the lower contact layer, the mesa structure comprising an active layer and an upper contact layer; a first electrode pad arranged on the lower contact layer; a second electrode pad arranged on the mesa structure; a first lower extension and a second lower extension extending from the first electrode pad towards the second edge, distal ends of the first lower extension and the second lower extension being farther away from each other than front ends thereof contacting the first electrode pad; and a first upper extension, a second upper extension, and a third upper extension extending from the second electrode pad, wherein the first upper extension and the second upper extension extend from the second electrode pad to enclose the first lower extension and the second lower extension, and the third upper extension extends to a region between the first lower extension and the second lower extension, and wherein the first upper extension and the second upper extension extend to be relatively closer to the third edge and the fourth edge, respectively, and then extend to be relatively farther away from the third edge and the fourth edge, respectively. view more

A light source, comprising: a primary excitation source configured to emit electromagnetic radiation at a first peak wavelength and a band of wavelengths around the first peak wavelength; a secondary emitter conversion element optically coupled to the primary excitation source, the secondary emitter conversion element configured to absorb at least a portion the electromagnetic radiation at the first peak wavelength from the primary excitation source and emit electromagnetic radiation at a second peak wavelength and a band of wavelengths around the second peak wavelength, wherein the second peak wavelength is longer than the first peak wavelength; a non-imaging optical coupler optically coupled to the secondary emitter conversion element; a gap between the secondary emitter conversion element and the non-imaging optical coupler; and a material disposed in the gap. view more

The light source of claim 33, wherein the secondary emitter conversion element comprises a phosphor material.

The light source of claim 33, wherein the primary excitation source comprises at least one light-emitting diode (LED).

The light source of claim 43, wherein the at least one LED is configured to emit electromagnetic radiation at the first peak wavelength, wherein the first peak wavelength falls in the range of about 365 nm to about 465 nm.

The light source of claim 43, wherein the secondary emitter conversion element is configured to emit electromagnetic radiation at the second peak wavelength, wherein the second peak wavelength falls in the range of about 415 nm to about 705 nm.

The light source of claim 33, wherein the material is optical grade Silicone.

A light-emitting device, comprising: first and second lead frames spaced apart from each other, the first and second lead frames each comprising a first surface, an opposing second surface, and sidewalls arranged between the first surface and the second surface thereof, wherein the first and second lead frames each comprise three inset sidewalls that at least partially define a fixing space, the fixing space undercutting the first surfaces along three sides of the first and second lead frames; a light-emitting diode chip arranged on the first surface of the first or second lead frame; and a resin part disposed in the fixing space to support the first and second lead frames. view more

The light-emitting device of claim 1, wherein the first surface and the second surface of the at least one of the first and second lead frames comprise different surface areas from each other.

The light-emitting device of claim 1, wherein the inset sidewalls form a stepped structure.

The light-emitting device of claim 1, wherein the fixing space comprises a fixing hole formed in at least one of the first and second lead frames.

The light-emitting device of claim 8, wherein the fixing hole extends through a body of at least one of the first lead frame and the second lead frame.

A light-emitting device, comprising: first and second lead frames spaced apart from each other, the first and second lead frames each comprising a first surface, an opposing second surface, and sidewalls arranged between the first surface and the second surface thereof, wherein the first and second lead frames comprise inset sidewalls, the inset sidewalls undercutting and surrounding at least three continuous sides of the first surfaces of the first and second lead frames, and at least one of the first surface, the second surface, and the sidewalls of the first and second lead frames partially defining a fixing space; a light-emitting diode chip arranged on the first surface of the first or second lead frame; and a resin part disposed in the fixing space to support the first and second lead frames. view more

The light-emitting device of claim 12, further comprising a fixing hole formed in at least one of the first and second lead frames, and exposed to the fixing space at one of the inset sidewalls.

The light-emitting device of claim 14, wherein the sidewalls comprise stepped portions connected to the inset sidewalls.

The light-emitting device of claim 15, wherein: the fixing space surrounds the at least three continuous sides of each of the first and second lead frames; and the fixing space is disposed in a facing region between the first and second lead frames.

An aspherical lens, comprising: a light entrance plane configured to receive light emitted from a light source; and a light exit plane configured to radiate the light received by the light entrance plane, wherein the light exit plane comprises: protrusions disposed on a portion of a side surface of the light exit plane; and a curved surface disposed on the side surface of the light exit plane, wherein the aspherical lens has a symmetrical structure. view more

The aspherical lens of claim 1, wherein the aspherical lens comprises a dispersing part.

A light emitting device, comprising: a substrate; a light emitting diode (LED) chip disposed on the substrate; and an aspherical LED lens disposed on the LED chip, the aspherical LED lens comprising a radially symmetrical structure with respect to a central axis of the aspherical LED lens, wherein the aspherical LED lens comprises: protrusions disposed on a portion of a side surface of the light exit plane; a curved surface disposed on the side surface of the light exit plane; and a linear section disposed between the curved surface and a central axis of the aspherical LED lens. view more

The light emitting device of claim 5, wherein the LED chip is surrounded by fluorescent material.

The light emitting device of claim 5, wherein the light emitting device comprises an encapsulation material surrounding the LED chip.

The light emitting device of claim 5, wherein the light emitting device comprises an air layer between the light entrance plane and the LED chip.

The light emitting device of claim 5, wherein the aspherical LED lens comprises a dispersing part.

The light emitting device of claim 5, wherein the LED chip is disposed on the central axis of the aspherical LED lens.

A light emitting diode (LED) package, comprising: a semiconductor stack comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a plurality of contact holes arranged in the second conductive type semiconductor layer and the active layer, the contact holes exposing the first conductive type semiconductor layer; a first electrode pad arranged over a first side of the semiconductor stack, the first electrode pad being electrically connected to the first conductive type semiconductor layer via some of the plurality of contact holes; a second electrode pad arranged over the first side of the semiconductor stack, the second electrode pad being electrically connected to the second conductive type semiconductor layer; and a protective insulation layer covering a sidewall of the first conductive type semiconductor layer and the second conductive type semiconductor layer, wherein the protective insulation layer includes insulation layers having different indices of refraction from each other. view more

The LED package of claim 1, further comprising a wavelength convertor arranged over a second side of the semiconductor stack, the second side being opposite to the first side of the semiconductor stack, wherein the wavelength convertor comprises a phosphor sheet or an impurity-doped material. view more

The LED package of claim 1, further comprising a transparent conductive oxide film contact layer or a reflective metal layer over the second conductive type semiconductor layer a part of the transparent conductive oxide film contact layer or the reflective metal layer is formed between the second conductive type semiconductor layer and the protective insulation layer. view more

A light emitting diode (LED) module, comprising: a circuit board; a LED package arranged over the circuit board without bonding wires, wherein the LED package includes: a semiconductor stack comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a plurality of contact holes arranged in the second conductive type semiconductor layer and the active layer, the contact holes exposing the first conductive type semiconductor layer; a first electrode pad arranged over a first side of the semiconductor stack, the first electrode pad being electrically connected to the first conductive type semiconductor layer via some of the plurality of contact holes; a second electrode pad arranged over the first side of the semiconductor stack, the second electrode pad being electrically connected to the second conductive type semiconductor layer; and a protective insulation layer covering a sidewall of the first conductive type semiconductor layer and the second conductive type semiconductor layer, wherein the protective insulation layer includes insulation layers having different indices of refraction from each other; and a lens to adjust an orientation angle of light emitted from the LED package. view more

A light emitting diode (LED) module, comprising: a circuit board; a LED package bonded on the circuit board without bonding wires; wherein the LED package comprising a semiconductor stack comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a plurality of contact holes arranged in the second conductive type semiconductor layer and the active layer, the contact holes exposing the first conductive type semiconductor layer; a first electrode pad arranged over a first side of the semiconductor stack, the first electrode pad being electrically connected to the first conductive type semiconductor layer via some of the plurality of contact holes; a second electrode pad arranged over the first side of the semiconductor stack, the second electrode pad being electrically connected to the second conductive type semiconductor layer; and a protective insulation layer covering a sidewall of the first conductive type semiconductor layer. view more

The LED module of claim 8, further comprising a wavelength converter over the opposite side of the LED package to the first and second electrode pads, wherein the wavelength convertor comprises a phosphor sheet or an impurity-doped material.

The LED module of claim 8, further comprises a lens to adjust an orientation angle of light emitted from the LED package.

The LED module of claim 8, wherein the protective insulation layer includes insulation layers having different indices of refraction from each other.

The LED module of claim 12, further comprising a transparent conductive oxide film contact layer or a reflective metal layer over the second conductive type semiconductor layer; and a first part of the protective insulation layer covering the contact layer. view more

A light-emitting diode chip configured to emit light of a first wavelength range and light of a second wavelength range, comprising: a substrate; a light-emitting structure disposed on a first surface of the substrate, the light-emitting structure comprising an active layer disposed between a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer, and configured to emit light of the first wavelength range; first and second distributed Bragg reflectors (DBRs) disposed on a second surface of the substrate; and a phosphor disposed on the light-emitting structure, wherein: the first DBR is disposed closer to the substrate than the second DBR; the first wavelength range comprises a blue wavelength range; light of the second wavelength range is converted by the phosphor; the first DBR comprises a higher reflectivity for light of the second wavelength range than for light of the first wavelength range; and the second DBR comprises a higher reflectivity for light of the first wavelength range than for light of the second wavelength range. view more

The light-emitting diode chip of claim 1, further comprising a phosphor disposed on the light-emitting structure, wherein the phosphor is configured to convert light of the second wavelength range.

The light-emitting diode chip of claim 2, wherein the second wavelength range comprises a red wavelength range.

The light-emitting diode chip of claim 2, wherein the second wavelength range comprises a green wavelength range.

The light-emitting diode chip of claim 1, wherein the first DBR contacts the second surface of the substrate.

The light-emitting diode chip of claim 1, wherein the first surface of the substrate comprises a patterned surface.

The light-emitting diode chip of claim 1, wherein the area of the substrate is at least 90,000 μm<sup>2</sup>.

The light-emitting diode chip of claim 1, wherein: the first DBR comprises pairs of first material layers comprising a first optical thickness and second material layers comprising a second optical thickness; the second DBR comprises pairs of third material layers comprising a third optical thickness and fourth material layers comprising a fourth optical thickness; and the refractive index of the first material layers is different from the refractive index of the second material layers, and the refractive index of the third material layers is different from the refractive index of the fourth material layers. view more

The light-emitting diode chip of claim 13, wherein the first and second material layers comprise the same refractive index as the third and fourth material layers, respectively.

The light-emitting diode chip of claim 13, wherein the first optical thickness is thicker than the third optical thickness, and the second optical thickness is thicker than the fourth optical thickness.

A light emitting diode (LED), comprising: a substrate; a first semiconductor layer disposed on the substrate; an active layer disposed on a portion of the first semiconductor layer; a second semiconductor layer disposed on the active layer; a reflection pattern disposed on a portion of the second semiconductor layer; and a first insulating layer comprising a first portion having a first thickness and a second portion having a second thickness different from the first thickness, wherein: the first portion is disposed on the reflection pattern; and the second portion is disposed on the second semiconductor layer. view more

The LED of claim 1, wherein the second thickness is greater than the first thickness.

The LED of claim 1, wherein the first insulating layer has a first opening exposing the reflection pattern.

The LED of claim 1, wherein: the first semiconductor layer supports a number of upper layers; and a trench or a hole is formed in the upper layers and extends to the first semiconductor layer.

The LED of claim 3, wherein the first insulating layer further has a second opening exposing the first semiconductor layer.

A light emitting module, comprising: a circuit board; light emitting elements disposed on the circuit board, each light emitting element comprising: light emitting diode chips; and a wavelength conversion layer coated on the light emitting diode chips; and a lens disposed on the light emitting elements and configured to diffuse light emitted from the light emitting elements, wherein the lens comprises a concave part comprising a light incident surface and an upper surface through which the light incident on the lens is emitted, at least one of the light incident surface and the upper surface comprises sections disposed at least 15° from a central axis and sequentially connected in a first direction, the sections comprise sequentially connected first, second, and third sections, and thicknesses of the first, second, and third sections are each at least 1 μm, and are less than the width of the light emitting element. view more

The light emitting module of claim 1, wherein adjacent sections have different curvatures.

The light emitting module of claim 1, wherein the thickness of each of the sections is at least 1 μm and is less than the width of the light emitting element.

The light emitting module of claim 1, wherein the concave part and the upper surface of the lens have a rotating body shape with respect to the central axis.

The light emitting module of claim 1, wherein: the width of an inlet of the concave part of the lens is greater than the width of the light emitting element; and the width of the inlet is less than three times the width of the light emitting element.

The light emitting module of claim 1, wherein: the upper surface comprises a convex part having a decreasing width along the first direction extending away from the light emitting elements and a concave part having an increasing width along the first direction extending away from the light emitting elements; and the concave part is disposed closer to the central axis than the convex part. view more

The light emitting module of claim 9, wherein the concave part comprises a plurality of sections, and the sections of the concave part each comprise a thicknesses less than thicknesses of the convex part.

A lens configured to diffuse light emitted from light emitting elements, the lens comprising: a concave part defining a light incident surface; and an upper surface through which light incident on the lens is emitted, wherein at least one of the light incident surface and the upper surface comprises sections disposed at least 15° from a central axis and sequentially connected in a first direction, the sections comprise sequentially connected first, second, and third sections, and thicknesses of the first, second, and third sections are each at least 1 μm and are less than the width of the light emitting element. view more

The lens of claim 11, wherein adjacent sections have different curvatures.

The lens of claim 11, wherein the thicknesses of each of the sections is at least 1 μm and is less than the width of the light emitting element.

The lens of claim 11, wherein the lens has a rotating body shape with respect to the central axis.

The lens of claim 11, wherein the upper surface comprises a convex part having a decreasing width along the first direction extending away from the light incident surface and a concave part having an increasing width along the first direction extending away from the light incident surface; and the concave part is disposed closer to the central axis than the convex part. view more

The lens of claim 18, wherein the concave part comprises sections each having a thickness less than the thicknesses of sections comprising the convex part.

A light-emitting diode package, comprising: a body and leads, the body comprising a mounting surface; a light-emitting structure disposed on the mounting surface, the light-emitting structure comprising an active layer disposed between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer; a phosphor member disposed on the light-emitting structure; and a distributed Bragg reflector disposed between the light-emitting structure and the mounting surface, wherein the distributed Bragg reflector comprises a first distributed Bragg reflector and a second distributed Bragg reflector; and wherein an optical thickness of material layers within the first distributed Bragg reflector is greater than an optical thickness of material layers within the second distributed Bragg reflector. view more

The light-emitting diode package of claim 1, wherein the light-emitting structure is disposed on the distributed Bragg reflector.

The light-emitting diode package of claim 2, wherein the distributed Bragg reflector contacts the light-emitting structure.

The light-emitting diode package of claim 1, wherein the first distributed Bragg reflector is disposed between the light-emitting structure and the second distributed Bragg reflector.

The light-emitting diode package of claim 1, further comprising wiring bonded to the light-emitting structure, wherein the distributed Bragg reflector is disposed in a first region spaced apart from a second region where the wiring is bonded to the light-emitting structure. view more

The light-emitting diode package of claim 1, wherein: the first distributed Bragg reflector comprises higher reflectivity for light in a green wavelength range or a red wavelength range than for light in a blue wavelength range; and the second distributed Bragg reflector comprises higher reflectivity for light in a blue wavelength range than for light in a red wavelength range. view more

The light-emitting diode package of claim 10, wherein a central wavelength of the first distributed Bragg reflector is longer than a central wavelength of the second distributed Bragg reflector.

The light-emitting diode package of claim 1, wherein the light-emitting structure is configured to emit light in a blue wavelength range.

An illumination lens, comprising: a light incident surface that defines a cavity having rotational symmetry with respect to a central axis, the light incident surface configured to receive light from an underlying light emitting element; a light exiting surface comprising a flat surface intersecting the central axis and a convex surface extended from the flat surface toward a side portion; and a bottom surface connecting the light incident surface and the light exiting surface, wherein: an uppermost part of the light exiting surface has an infinite intersecting point with a horizontal axis vertical to the central axis in a cross-sectional view; a lowermost part of the bottom surface has two intersecting points with the horizontal axis in the cross-sectional view; and the bottom surface comprises an inclined surface having an angle formed by the bottom surface with respect to the horizontal axis. view more

The illumination lens of claim 1, wherein a first portion disposed between the uppermost part of the light exiting surface and an uppermost part of the light incident surface has two intersecting points with the horizontal axis in the cross-sectional view. view more

The illumination lens of claim 1, wherein a second portion disposed between the uppermost part of the light incident surface and the lowermost part of the bottom surface has four intersecting points with the horizontal axis in the cross-sectional view. view more

The illumination lens of claim 1, wherein the lens at the uppermost part of the light incident surface has three intersecting points with the horizontal axis in the cross-sectional view.

The illumination lens of claim 1, wherein the flat surface of the light exiting surface is superposed on a center of the light incident surface.

The illumination lens of claim 1, wherein the light incident surface comprises concave surfaces facing each other with respect to the central axis.

An illumination lens, comprising: a light incident surface that defines a cavity having rotational symmetry with respect to a central axis, the light incident surface configured to receive light from an underlying light emitting element; a light exiting surface comprising a flat surface intersecting the central axis and a convex surface extended from the flat surface toward a side portion; a bottom surface connecting the light incident surface and the light exiting surface; and at least one peg disposed on a rim of the bottom surface, wherein: an uppermost part of the light exiting surface has an infinite intersecting point with a horizontal axis vertical to the central axis in a cross-sectional view; and a lowermost part of the bottom surface has two intersecting points with the horizontal axis in the cross-sectional view. view more

A light emitting diode, comprising: an n-type contact layer; a p-type contact layer disposed over the n-type contact layer; an active region disposed between the n-type contact layer and the p-type contact layer and comprising a multi-quantum well structure including a quantum well layer that includes a composition ratio of Indium (In) and a barrier layer; a superlattice layer including a plurality of layers, disposed near the active region; and a spacer layer including a plurality of layers disposed between the superlattice layer and the n-type contact layer and having a bandgap smaller than that of the barrier layer and greater than that of the quantum well layer. view more

The light emitting diode of claim 1, wherein the spacer layer comprises a stacked structure of at least two different InGaN layers.

The light emitting diode of claim 1, wherein the at least one layer of the plurality of layers in the spacer layer positioned adjacent to the active region is doped with n-type impurities.

A light emitting diode, comprising: an n-type contact layer doped with n-type impurities; a spacer layer disposed over the n-type contact layer and including a stack structure including a first semiconductor layer and a second semiconductor layer, wherein the first semiconductor layer is closer to the n-type contact layer than the second semiconductor layer; an active region disposed over the spacer layer and having a multi-quantum well structure including a quantum well layer and a barrier layer; and a p-type contact layer disposed over the active region; wherein the first and second semiconductor layers of the spacer layer have respective Indium (In) composition ratios and the In composition ratio of the first semiconductor layer is lower than the In composition ration of the second semiconductor layer and wherein the spacer layer has a bandgap smaller than that of the barrier layer and greater than that of the quantum well layer. view more

The light emitting diode of claim 9, wherein the quantum well layer includes an InGaN layer.

The light emitting diode of claim 9, further comprising an intermediate layer formed between the n-type contact layer and the spacer layer and including n-AlGaN layer.

The light emitting diode of claim 9, wherein the multi-quantum well structure of the active region includes a composition ratio of In.

The light emitting diode of claim 19, wherein the composition ratio of In in at least one of the first and second semiconductor layers is lower than the composition ratio of In in the multi-quantum well structure.

The light emitting diode of claim 9, further comprising a superlattice layer disposed near the active region.

light-emitting diode (LED), comprising: a substrate; a semiconductor stacked structure disposed on the substrate, the semiconductor stacked structure comprising a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer; a wavelength converting layer configured to convert a wavelength of light emitted from the semiconductor stacked structure, the wavelength converting layer covering side surfaces of the substrate and the semiconductor stacked structure; and a distributed Bragg reflector (DBR) configured to reflect at least a portion of light wavelength-converted by the wavelength converting layer, wherein at least a portion of the DBR is covered with a metal layer configured to reflect light transmitted through the DBR, and wherein the DBR comprises alternately stacked insulating layers with different refractive indices. view more

The LED of claim 1, further comprising: a first electrode disposed on the semiconductor stacked structure and electrically connected to the first conductivity-type semiconductor layer; and a second electrode disposed on the semiconductor stacked structure and electrically connected to the second conductivity-type semiconductor layer. view more

A light-emitting diode (LED) module, comprising: a mount; and an LED disposed on the mount, the LED comprising:a substrate;a semiconductor stacked structure disposed on the substrate, the semiconductor stacked structure comprising a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer;a wavelength converting layer configured to convert a wavelength of light emitted from the semiconductor stacked structure, the wavelength converting layer covering side surfaces of the substrate and the semiconductor stacked structure; anda distributed Bragg reflector (DBR) configured to reflect at least a portion of light wavelength-converted by the wavelength converting layer,wherein at least a portion of the DBR is covered with a metal layer configured to reflect light transmitted through the DBR, andwherein the DBR comprises alternately stacked insulating layers with different refractive indices. view more

The LED module claim 8, wherein the mount comprises at least one of a printed circuit board, a lead frame, and a ceramic substrate.

The LED module of claim 9, wherein the mount further comprises lead terminals, wherein the lead terminals are electrically connected to the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer.

The LED module of claim 8, further comprising: a first electrode disposed on the semiconductor stacked structure and electrically connected to the first conductivity-type semiconductor layer; and a second electrode disposed on the semiconductor stacked structure and electrically connected to the second conductivity-type semiconductor layer. view more

The LED module of claim 14, wherein the first electrode comprises a lower electrode and an upper electrode disposed on the lower electrode.

A light emitting device, comprising: an n-type semiconductor layer; a p-type semiconductor layer; an active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer; and an electron blocking layer disposed between the p-type semiconductor layer and the active layer, wherein: the p-type semiconductor layer includes a hole injection layer, a p-type contact layer, and a hole transport layer disposed between the hole injection layer and the p-type contact layer, and the hole transport layer includes first and second low-doped layers and at least one intermediate doped layer disposed between the first and second low-doped layers, wherein the first low-doped layer adjoins the p-type contact layer and wherein dopant concentrations of the first and second low-doped layers are less than a dopant concentration of the at least one intermediate doped layer, wherein the dopant concentration of the first low-doped layer decreases with increasing distance from the intermediate doped layer and then increases with decreasing distance to the p-type contact layer. view more

The light emitting device of claim 1, wherein the hole transport layer has a greater thickness than a total thickness of the hole injection layer and the p-type contact layer.

The light emitting device of claim 1, wherein the hole injection layer adjoins the electron blocking layer.

The light emitting device of claim 1, wherein the first low-doped layer includes a zone in which a hole concentration decreases with increasing distance from the hole injection layer.

The light emitting device of claim 1, wherein the first low-doped layer further includes a zone in which a hole concentration increases with decreasing distance to the intermediate doped layer.

The light emitting device of claim 7, wherein the zone in which the hole concentration increases with decreasing distance to the intermediate doped layer includes a region in which the hole concentration linearly increases.

The light emitting device of claim 1, wherein the intermediate doped layer has higher electrical resistance than the low-doped layers.

A light emitting device, comprising: a substrate; an n-type semiconductor layer formed over the substrate; an active layer formed over the n-type semiconductor layer; a p-type semiconductor layer formed over the active layer, wherein the p-type semiconductor layer includes first and second low-doped layers and a doped layer disposed between the low-doped layers and the second low-doped layers include a hole concentration decreasing with increasing distance from the active layer and then increasing with decreasing distance to the doped layer; and a p-type contact layer formed over the doped layer, and wherein the first low-doped layer adjoins the p-type contact layer and has a dopant concentration less than that of the doped layer. view more

The light emitting device of claim 14, wherein the p-type semiconductor layer further comprises: a hole injection layer formed under the doped layer.

The light emitting device of claim 15, wherein the doped layer is arranged apart from the p-type contact layer such that the doped layer includes a region with a hole concentration of 62% to 87% of that of the p-type contact layer.

The light emitting device of claim 15, wherein the sum of the thicknesses of the first and second low-doped layers and the doped layer is greater than the sum of the thickness of the hole injection layer and the p-type contact layer.

The light emitting device of claim 15, further comprising an electron blocking layer disposed between the active layer and the hole injection layer such that the hole injection layer adjoins the electron blocking layer.

The light emitting device of claim 14, wherein the first low-doped layer includes a zone in which a hole concentration increases with decreasing distance to the doped layer.

The light emitting device of claim 19, wherein the zone in which the hole concentration increases with decreasing distance to the doped layer includes a region in which the hole concentration linearly increases.